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| DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR(R) SUPER BARRIER RECTIFIER Please click here to visit our online spice models database. Features * Low On-Resistance * 95m @VGS = -4.5V * 120m @VGS = -2.5V * 86m (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage (R) Incorporates Low VF Super Barrier Rectifier (SBR ) Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * Case: DFN2020B-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.0065 grams (approximate) NEW PRODUCT * * * * * * * * DFN2020B-6 D 3 Q1 NC 2 D1 A 1 A NC D K D 4 5 6 K G S S BOTTOM VIEW G K BOTTOM VIEW Pin Configuration TOP VIEW Internal Schematic Maximum Ratings - TOTAL DEVICE Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 1.4 89 -55 to +150 Unit W C/W C Maximum Ratings - P-CHANNEL MOSFET - Q1 Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) @TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 12 -3.5 -12 Units V V A A Maximum Ratings - SBR(R) - D1 Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage @TA = 25C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM Value 35 25 1 3 Unit V V A A Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Notes: 1. 2. 3. 4. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 6 - 2 1 of 6 www.diodes.com March 2009 (c) Diodes Incorporated DMS2220LFDB Electrical Characteristics - P-CHANNEL MOSFET - Q1 Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 -0.45 @TA = 25C unless otherwise specified Typ 60 74 86 8 0.7 632 65 54 Max -1 100 800 -1.3 95 120 -1.2 Unit V A nA V m S V pF pF pF Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A VDS = -10V, VGS = 0V f = 1.0MHz NEW PRODUCT Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Electrical Characteristics - SBR(R) - D1 Characteristic Reverse Breakdown Voltage (Note 5) Forward Voltage Reverse Current (Note 5) Notes: @ TA = 25C unless otherwise specified Symbol V(BR)R VF IR Min 35 Typ 40 354 415 Max 0.42 0.49 100 Unit V V A Test Condition IR = 1mA IF = 0.5A IF = 1.0A VR = 20V 5. Short duration pulse test used to minimize self-heating effect. Q1, P-CHANNEL MOSFET 10 VGS = -8.0V VGS = -4.5V 10 VDS = -5V -ID, DRAIN CURRENT (A) VGS = -2.0V 6 -ID, DRAIN CURRENT (A) 8 VGS = -2.5V 8 6 4 VGS = -1.5V 4 TA = 150C 2 VGS = -1.0V VGS = -1.2V 2 TA = 125C TA = 85C TA = 25C TA = -55C 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0 0.5 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 6 - 2 2 of 6 www.diodes.com March 2009 (c) Diodes Incorporated DMS2220LFDB Q1, P-CHANNEL MOSFET - Continued RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 8 0.14 0.12 0.1 TA = 125C TA = 150C NEW PRODUCT VGS = -1.8V VGS = -2.5V VGS = -4.5V 0.08 0.06 0.04 0.02 0 0 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 1 8 TA = 85C TA = 25C TA = -55C RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.11 1.4 VGS = -2.5V ID = -2A 0.09 VGS = -2.5V ID = -2A 1.2 VGS = -4.5V ID = -5A 0.07 VGS = -4.5V ID = -5A 1.0 0.8 0.05 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature 10,000 -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz 1 0.9 0.8 0.7 0.6 0.5 ID = -250A ID = -1mA C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 0.4 0.3 0.2 -50 10 0 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 4 20 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 6 - 2 3 of 6 www.diodes.com March 2009 (c) Diodes Incorporated DMS2220LFDB Q1, P-CHANNEL MOSFET - Continued 10 NEW PRODUCT -IS, SOURCE CURRENT (A) 8 6 TA = 25C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 D = 0.02 RJA(t) = r(t) * RJA RJA = 146C/W P(pk) 0.01 D = 0.01 D = 0.005 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 10 100 1,000 SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 6 - 2 4 of 6 www.diodes.com March 2009 (c) Diodes Incorporated DMS2220LFDB D1, SBR(R) IF, INSTANTANEOUS FORWARD CURRENT (A) 0.7 0.6 PD, POWER DISSIPATION (W) 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 11 Forward Power Dissipation 1 TA = 150C 0.1 TA = 125C NEW PRODUCT 0.01 TA = 85C TA = 25C 0.001 TA = -55C 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 12 Typical Forward Characteristics 10,000 IR, INSTANTANEOUS REVERSE CURRENT(uA) 1,000 TA = 150C T A = 125C 10,000 1,000 C, CAPACITANCE (pF) f = 1MHz 100 TA = 85C 10 100 1 TA = 25C 10 0.1 0.01 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 13 Typical Reverse Characteristics TA, DERATED AMBIENT TEMPERATURE (C) 1 0.1 1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 14 Total Capacitance vs. Reverse Voltage 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 Note 2 150 125 100 75 50 25 0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 15 Forward Current Derating Curve 175 0 10 20 30 VR, DC REVERSE VOLTAGE (V) Fig. 16 Operating Temperature Derating 40 SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 6 - 2 5 of 6 www.diodes.com March 2009 (c) Diodes Incorporated DMS2220LFDB Ordering Information Part Number DMS2220LFDB-7 Notes: (Note 6) Case DFN2020B-6 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NEW PRODUCT ME = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1 2011 Y May 5 Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D ME Date Code Key Year Code Month Code 2008 V Jan 1 Feb 2 2009 W Mar 3 2010 X Apr 4 Package Outline Dimensions A A1 D A3 SEATING PLANE YM Pin#1 ID D2 z d E E2 f f L e b DFN2020B-6 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Y X2 G1 X1 C G G Y1 Z Dimensions Z G G1 X1 X2 Y Y1 C Value (in mm) 1.67 0.20 0.40 1.0 0.45 0.37 0.70 0.65 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 6 - 2 6 of 6 www.diodes.com March 2009 (c) Diodes Incorporated |
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